异质(zhi)结(jie)(jie)硅(gui)(gui)太(tai)阳能(neng)(neng)电(dian)(dian)(dian)(dian)池(chi)的(de)(de)(de)工(gong)艺要求与同(tong)质(zhi)结(jie)(jie)晶体硅(gui)(gui)太(tai)阳能(neng)(neng)电(dian)(dian)(dian)(dian)池(chi)相(xiang)(xiang)比(bi)，有(you)几个优(you)点：与同(tong)质(zhi)结(jie)(jie)形成(cheng)(cheng)(cheng)相(xiang)(xiang)比(bi)，异质(zhi)结(jie)(jie)形成(cheng)(cheng)(cheng)期间的(de)(de)(de)热预(yu)算减(jian)(jian)少。a-Si:H层(ceng)(ceng)和(he)(he)TCO前接触的(de)(de)(de)沉积(ji)温(wen)度通(tong)常(chang)低于(yu)250℃。与传统的(de)(de)(de)晶体硅(gui)(gui)太(tai)阳能(neng)(neng)电(dian)(dian)(dian)(dian)池(chi)相(xiang)(xiang)比(bi)，异质(zhi)结(jie)(jie)的(de)(de)(de)形成(cheng)(cheng)(cheng)和(he)(he)沉积(ji)接触层(ceng)(ceng)所需的(de)(de)(de)时间也更短。由于(yu)异质(zhi)结(jie)(jie)硅(gui)(gui)太(tai)阳能(neng)(neng)电(dian)(dian)(dian)(dian)池(chi)的(de)(de)(de)低加工(gong)温(wen)度及其对(dui)称结(jie)(jie)构(gou)，晶圆弯(wan)曲被(bei)抑制。外(wai)(wai)延(yan)生(sheng)(sheng)长(zhang)(zhang)：在(zai)晶体硅(gui)(gui)和(he)(he)a-Si:H钝(dun)化(hua)(hua)层(ceng)(ceng)之间没有(you)尖锐的(de)(de)(de)界面(mian)(mian)，而外(wai)(wai)延(yan)生(sheng)(sheng)长(zhang)(zhang)的(de)(de)(de)结(jie)(jie)果是混合相(xiang)(xiang)的(de)(de)(de)界面(mian)(mian)区域，界面(mian)(mian)缺陷态的(de)(de)(de)密(mi)度增加。在(zai)a-Si:H的(de)(de)(de)沉积(ji)过(guo)程(cheng)(cheng)中，外(wai)(wai)延(yan)生(sheng)(sheng)长(zhang)(zhang)导(dao)致异质(zhi)结(jie)(jie)太(tai)阳能(neng)(neng)电(dian)(dian)(dian)(dian)池(chi)的(de)(de)(de)性能(neng)(neng)恶化(hua)(hua)，特别是影(ying)响了(le)Voc。事(shi)实证明(ming)，在(zai)a-Si:H的(de)(de)(de)沉积(ji)过(guo)程(cheng)(cheng)中，高沉积(ji)温(wen)度（>140℃）会导(dao)致外(wai)(wai)延(yan)生(sheng)(sheng)长(zhang)(zhang)。其他(ta)沉积(ji)条件，如功率和(he)(he)衬底(di)表面(mian)(mian)的(de)(de)(de)性质(zhi)，也对(dui)外(wai)(wai)延(yan)生(sheng)(sheng)长(zhang)(zhang)有(you)影(ying)响，通(tong)过(guo)使(shi)用a-SiO:H合金而不是a-Si:H，可以有(you)效抑制外(wai)(wai)延(yan)生(sheng)(sheng)长(zhang)(zhang)。HJT的(de)(de)(de)清洗特点:在(zai)制绒和(he)(he)清洗之后(hou)的(de)(de)(de)圆滑处理(li)导(dao)致了(le)表面(mian)(mian)均匀性的(de)(de)(de)改(gai)善，减(jian)(jian)少了(le)微观粗(cu)糙度，并提(ti)(ti)高了(le)整个装置的(de)(de)(de)性能(neng)(neng)。此外(wai)(wai)，氢气(qi)后(hou)处理(li)被(bei)发现有(you)利于(yu)提(ti)(ti)高a-Si:H薄膜的(de)(de)(de)质(zhi)量和(he)(he)表面(mian)(mian)钝(dun)化(hua)(hua)。CVD对(dui)比(bi)：HWCVD比(bi)PECVD有(you)几个优(you)点。例如，硅(gui)(gui)烷的(de)(de)(de)热解避免了(le)表面(mian)(mian)的(de)(de)(de)离子轰击，而且产生(sheng)(sheng)的(de)(de)(de)原子氢可以使(shi)表面(mian)(mian)钝(dun)化(hua)(hua)。光伏(fu)异质(zhi)结(jie)(jie)是一(yi)种绿色(se)能(neng)(neng)源技术，生(sheng)(sheng)产过(guo)程(cheng)(cheng)中不产生(sheng)(sheng)污染物，符合可持续发展的(de)(de)(de)要求。成(cheng)(cheng)(cheng)都(dou)单晶硅(gui)(gui)异质(zhi)结(jie)(jie)PECVD

釜(fu)川自主研发的(de)“零界”高(gao)(gao)效异(yi)质(zhi)(zhi)结电(dian)(dian)池整线制(zhi)(zhi)造解(jie)决(jue)方(fang)案已实现设(she)备(bei)(bei)(bei)(bei)国产(chan)(chan)化，该(gai)解(jie)决(jue)方(fang)案叠加(jia)(jia)了(le)(le)双面微晶、无银或低银金属化工(gong)艺，提升了(le)(le)太(tai)阳(yang)能(neng)(neng)电(dian)(dian)池的(de)转(zhuan)换效率、良率和产(chan)(chan)能(neng)(neng)，并(bing)极大降低了(le)(le)生(sheng)产(chan)(chan)成本。釜(fu)川以(yi)半(ban)导体生(sheng)产(chan)(chan)设(she)备(bei)(bei)(bei)(bei)、太(tai)阳(yang)能(neng)(neng)电(dian)(dian)池生(sheng)产(chan)(chan)设(she)备(bei)(bei)(bei)(bei)为(wei)主要产(chan)(chan)品(pin)，打(da)造光(guang)伏设(she)备(bei)(bei)(bei)(bei)一体化服务(wu)。拥(yong)有强大的(de)科研团队，凭借(jie)技术竞争力，在清洗制(zhi)(zhi)绒设(she)备(bei)(bei)(bei)(bei)、PECVD设(she)备(bei)(bei)(bei)(bei)、PVD设(she)备(bei)(bei)(bei)(bei)、电(dian)(dian)镀铜设(she)备(bei)(bei)(bei)(bei)等方(fang)面的(de)有独特优(you)势；以(yi)高(gao)(gao)效加(jia)(jia)工(gong)制(zhi)(zhi)造、快速终端交付的(de)能(neng)(neng)力，为(wei)客户提供优(you)质(zhi)(zhi)的(de)整线工(gong)艺设(she)备(bei)(bei)(bei)(bei)的(de)交付服务(wu)。深圳(zhen)釜(fu)川异(yi)质(zhi)(zhi)结设(she)备(bei)(bei)(bei)(bei)哪家好异(yi)质(zhi)(zhi)结电(dian)(dian)池的(de)出色性能(neng)(neng)和广泛(fan)的(de)应(ying)用前景使其(qi)成为(wei)未来太(tai)阳(yang)能(neng)(neng)产(chan)(chan)业的(de)明星技术。

太(tai)(tai)阳能异质(zhi)结(jie)中(zhong)的(de)(de)界(jie)(jie)面(mian)(mian)结(jie)构(gou)(gou)(gou)对(dui)性能有很大的(de)(de)影(ying)(ying)响。界(jie)(jie)面(mian)(mian)结(jie)构(gou)(gou)(gou)是(shi)指两(liang)种不同材料(liao)之间的(de)(de)交界(jie)(jie)面(mian)(mian)，它(ta)决(jue)定(ding)了(le)电(dian)(dian)(dian)(dian)子和(he)(he)空(kong)穴(xue)(xue)的(de)(de)传输和(he)(he)复(fu)合(he)情(qing)况(kuang)，从而(er)(er)影(ying)(ying)响了(le)太(tai)(tai)阳能电(dian)(dian)(dian)(dian)池(chi)的(de)(de)效(xiao)率(lv)。首先，界(jie)(jie)面(mian)(mian)结(jie)构(gou)(gou)(gou)的(de)(de)能带(dai)对(dui)齐情(qing)况(kuang)会(hui)影(ying)(ying)响电(dian)(dian)(dian)(dian)子和(he)(he)空(kong)穴(xue)(xue)的(de)(de)传输。如(ru)果(guo)能带(dai)对(dui)齐良好，电(dian)(dian)(dian)(dian)子和(he)(he)空(kong)穴(xue)(xue)可以自(zi)由地在(zai)两(liang)种材料(liao)之间传输，从而(er)(er)提高了(le)电(dian)(dian)(dian)(dian)池(chi)的(de)(de)效(xiao)率(lv)。反之，如(ru)果(guo)能带(dai)对(dui)齐不良，电(dian)(dian)(dian)(dian)子和(he)(he)空(kong)穴(xue)(xue)会(hui)被(bei)阻(zu)挡在(zai)界(jie)(jie)面(mian)(mian)处(chu)，从而(er)(er)降低了(le)电(dian)(dian)(dian)(dian)池(chi)的(de)(de)效(xiao)率(lv)。其次，界(jie)(jie)面(mian)(mian)结(jie)构(gou)(gou)(gou)的(de)(de)缺陷(xian)和(he)(he)杂(za)质(zhi)会(hui)影(ying)(ying)响电(dian)(dian)(dian)(dian)子和(he)(he)空(kong)穴(xue)(xue)的(de)(de)复(fu)合(he)情(qing)况(kuang)。如(ru)果(guo)界(jie)(jie)面(mian)(mian)处(chu)存在(zai)缺陷(xian)和(he)(he)杂(za)质(zhi)，它(ta)们会(hui)成(cheng)为(wei)电(dian)(dian)(dian)(dian)子和(he)(he)空(kong)穴(xue)(xue)复(fu)合(he)的(de)(de)中(zhong)心，从而(er)(er)降低了(le)电(dian)(dian)(dian)(dian)池(chi)的(de)(de)效(xiao)率(lv)。因此，优化界(jie)(jie)面(mian)(mian)结(jie)构(gou)(gou)(gou)的(de)(de)缺陷(xian)和(he)(he)杂(za)质(zhi)是(shi)提高太(tai)(tai)阳能电(dian)(dian)(dian)(dian)池(chi)效(xiao)率(lv)的(de)(de)重要手段。综上所(suo)述，太(tai)(tai)阳能异质(zhi)结(jie)中(zhong)的(de)(de)界(jie)(jie)面(mian)(mian)结(jie)构(gou)(gou)(gou)对(dui)电(dian)(dian)(dian)(dian)池(chi)性能有着重要的(de)(de)影(ying)(ying)响。优化界(jie)(jie)面(mian)(mian)结(jie)构(gou)(gou)(gou)可以提高电(dian)(dian)(dian)(dian)池(chi)的(de)(de)效(xiao)率(lv)，从而(er)(er)推动太(tai)(tai)阳能电(dian)(dian)(dian)(dian)池(chi)的(de)(de)发展。

异(yi)质(zhi)结(jie)(jie)是由(you)(you)不同材(cai)料(liao)(liao)(liao)组(zu)成(cheng)(cheng)的(de)(de)结(jie)(jie)构(gou)，其中(zhong)至(zhi)少有(you)一(yi)种(zhong)材(cai)料(liao)(liao)(liao)是半(ban)(ban)(ban)(ban)导(dao)(dao)(dao)体(ti)(ti)材(cai)料(liao)(liao)(liao)。根据不同的(de)(de)材(cai)料(liao)(liao)(liao)组(zu)合(he)方(fang)式和结(jie)(jie)构(gou)特点(dian)(dian)，异(yi)质(zhi)结(jie)(jie)可(ke)(ke)(ke)(ke)以(yi)(yi)(yi)(yi)(yi)分为以(yi)(yi)(yi)(yi)(yi)下几种(zhong)主(zhu)要类(lei)型(xing)(xing)：结(jie)(jie)：由(you)(you)p型(xing)(xing)半(ban)(ban)(ban)(ban)导(dao)(dao)(dao)体(ti)(ti)和n型(xing)(xing)半(ban)(ban)(ban)(ban)导(dao)(dao)(dao)体(ti)(ti)组(zu)成(cheng)(cheng)的(de)(de)结(jie)(jie)构(gou)，是常(chang)见的(de)(de)异(yi)质(zhi)结(jie)(jie)。在pn结(jie)(jie)中(zhong)，p型(xing)(xing)半(ban)(ban)(ban)(ban)导(dao)(dao)(dao)体(ti)(ti)和n型(xing)(xing)半(ban)(ban)(ban)(ban)导(dao)(dao)(dao)体(ti)(ti)的(de)(de)电(dian)(dian)(dian)子(zi)浓(nong)度(du)和空穴浓(nong)度(du)不同，形(xing)成(cheng)(cheng)了电(dian)(dian)(dian)场，使得pn结(jie)(jie)具有(you)整流、光电(dian)(dian)(dian)转换等(deng)(deng)(deng)特性(xing)。2.Schottky结(jie)(jie)：由(you)(you)金(jin)属和半(ban)(ban)(ban)(ban)导(dao)(dao)(dao)体(ti)(ti)组(zu)成(cheng)(cheng)的(de)(de)结(jie)(jie)构(gou)，金(jin)属为n型(xing)(xing)或(huo)(huo)(huo)p型(xing)(xing)半(ban)(ban)(ban)(ban)导(dao)(dao)(dao)体(ti)(ti)提供(gong)电(dian)(dian)(dian)子(zi)或(huo)(huo)(huo)空穴，形(xing)成(cheng)(cheng)势垒，使得电(dian)(dian)(dian)子(zi)或(huo)(huo)(huo)空穴在两种(zhong)材(cai)料(liao)(liao)(liao)之间流动。Schottky结(jie)(jie)具有(you)快速开关、高(gao)频特性(xing)等(deng)(deng)(deng)优点(dian)(dian)。3.量(liang)子(zi)阱(jing)结(jie)(jie)：由(you)(you)两种(zhong)不同带隙能(neng)(neng)量(liang)的(de)(de)半(ban)(ban)(ban)(ban)导(dao)(dao)(dao)体(ti)(ti)材(cai)料(liao)(liao)(liao)组(zu)成(cheng)(cheng)，中(zhong)间夹着(zhe)一(yi)层非(fei)常(chang)薄的(de)(de)半(ban)(ban)(ban)(ban)导(dao)(dao)(dao)体(ti)(ti)材(cai)料(liao)(liao)(liao)，形(xing)成(cheng)(cheng)能(neng)(neng)量(liang)势阱(jing)。量(liang)子(zi)阱(jing)结(jie)(jie)具有(you)量(liang)子(zi)效(xiao)应，可(ke)(ke)(ke)(ke)以(yi)(yi)(yi)(yi)(yi)用(yong)于(yu)制(zhi)造(zao)激光器(qi)、太阳(yang)能(neng)(neng)电(dian)(dian)(dian)池等(deng)(deng)(deng)器(qi)件(jian)。4.量(liang)子(zi)点(dian)(dian)结(jie)(jie)：由(you)(you)非(fei)常(chang)小的(de)(de)半(ban)(ban)(ban)(ban)导(dao)(dao)(dao)体(ti)(ti)颗粒组(zu)成(cheng)(cheng)，大小通常(chang)在1-10纳米之间。量(liang)子(zi)点(dian)(dian)结(jie)(jie)具有(you)量(liang)子(zi)效(xiao)应，可(ke)(ke)(ke)(ke)以(yi)(yi)(yi)(yi)(yi)用(yong)于(yu)制(zhi)造(zao)高(gao)效(xiao)的(de)(de)光电(dian)(dian)(dian)转换器(qi)件(jian)。5.悬挂(gua)门结(jie)(jie)：由(you)(you)两个不同材(cai)料(liao)(liao)(liao)的(de)(de)半(ban)(ban)(ban)(ban)导(dao)(dao)(dao)体(ti)(ti)组(zu)成(cheng)(cheng)，其中(zhong)一(yi)个半(ban)(ban)(ban)(ban)导(dao)(dao)(dao)体(ti)(ti)材(cai)料(liao)(liao)(liao)被刻蚀成(cheng)(cheng)一(yi)个非(fei)常(chang)薄的(de)(de)层，形(xing)成(cheng)(cheng)一(yi)个悬挂(gua)的(de)(de)结(jie)(jie)构(gou)。悬挂(gua)门结(jie)(jie)具有(you)高(gao)灵敏度(du)、低(di)功(gong)耗等(deng)(deng)(deng)特点(dian)(dian)，可(ke)(ke)(ke)(ke)以(yi)(yi)(yi)(yi)(yi)用(yong)于(yu)制(zhi)造(zao)传感器(qi)、存(cun)储器(qi)等(deng)(deng)(deng)器(qi)件(jian)。光伏异(yi)质(zhi)结(jie)(jie)可(ke)(ke)(ke)(ke)以(yi)(yi)(yi)(yi)(yi)应用(yong)在各种(zhong)表(biao)面上(shang)，如(ru)玻璃(li)、塑(su)料(liao)(liao)(liao)等(deng)(deng)(deng)，具有(you)广(guang)泛(fan)的(de)(de)应用(yong)前景。

光(guang)(guang)(guang)(guang)(guang)(guang)伏(fu)(fu)(fu)(fu)异(yi)质(zhi)(zhi)结(jie)(jie)中的(de)(de)(de)(de)光(guang)(guang)(guang)(guang)(guang)(guang)电(dian)(dian)(dian)(dian)转(zhuan)换效(xiao)(xiao)率(lv)受到多种因素的(de)(de)(de)(de)影(ying)(ying)响(xiang)，其中主要的(de)(de)(de)(de)因素包括以下几点：1.材(cai)料的(de)(de)(de)(de)选择(ze)：光(guang)(guang)(guang)(guang)(guang)(guang)伏(fu)(fu)(fu)(fu)异(yi)质(zhi)(zhi)结(jie)(jie)中的(de)(de)(de)(de)材(cai)料种类和(he)(he)质(zhi)(zhi)量对光(guang)(guang)(guang)(guang)(guang)(guang)电(dian)(dian)(dian)(dian)转(zhuan)换效(xiao)(xiao)率(lv)有着至关重(zhong)要的(de)(de)(de)(de)影(ying)(ying)响(xiang)。通常情(qing)况下，选择(ze)具(ju)有较(jiao)高(gao)(gao)吸收系(xi)数(shu)和(he)(he)较(jiao)低缺(que)陷密度(du)的(de)(de)(de)(de)材(cai)料可(ke)以提(ti)(ti)高(gao)(gao)光(guang)(guang)(guang)(guang)(guang)(guang)电(dian)(dian)(dian)(dian)转(zhuan)换效(xiao)(xiao)率(lv)。2.光(guang)(guang)(guang)(guang)(guang)(guang)照(zhao)强度(du)：光(guang)(guang)(guang)(guang)(guang)(guang)伏(fu)(fu)(fu)(fu)异(yi)质(zhi)(zhi)结(jie)(jie)的(de)(de)(de)(de)光(guang)(guang)(guang)(guang)(guang)(guang)照(zhao)强度(du)越高(gao)(gao)，其光(guang)(guang)(guang)(guang)(guang)(guang)电(dian)(dian)(dian)(dian)转(zhuan)换效(xiao)(xiao)率(lv)也(ye)会越高(gao)(gao)。因此，在实际应(ying)用中，需要根据(ju)光(guang)(guang)(guang)(guang)(guang)(guang)伏(fu)(fu)(fu)(fu)电(dian)(dian)(dian)(dian)池(chi)的(de)(de)(de)(de)使(shi)用环境和(he)(he)光(guang)(guang)(guang)(guang)(guang)(guang)照(zhao)条件进行合(he)理的(de)(de)(de)(de)设计和(he)(he)安装。3.温度(du)：温度(du)对光(guang)(guang)(guang)(guang)(guang)(guang)伏(fu)(fu)(fu)(fu)异(yi)质(zhi)(zhi)结(jie)(jie)的(de)(de)(de)(de)光(guang)(guang)(guang)(guang)(guang)(guang)电(dian)(dian)(dian)(dian)转(zhuan)换效(xiao)(xiao)率(lv)也(ye)有着显着的(de)(de)(de)(de)影(ying)(ying)响(xiang)。一般来(lai)说，光(guang)(guang)(guang)(guang)(guang)(guang)伏(fu)(fu)(fu)(fu)电(dian)(dian)(dian)(dian)池(chi)的(de)(de)(de)(de)温度(du)越低，其光(guang)(guang)(guang)(guang)(guang)(guang)电(dian)(dian)(dian)(dian)转(zhuan)换效(xiao)(xiao)率(lv)也(ye)会越高(gao)(gao)。4.结(jie)(jie)构设计：光(guang)(guang)(guang)(guang)(guang)(guang)伏(fu)(fu)(fu)(fu)异(yi)质(zhi)(zhi)结(jie)(jie)的(de)(de)(de)(de)结(jie)(jie)构设计也(ye)会对其光(guang)(guang)(guang)(guang)(guang)(guang)电(dian)(dian)(dian)(dian)转(zhuan)换效(xiao)(xiao)率(lv)产生(sheng)影(ying)(ying)响(xiang)。例如(ru)，通过优(you)化电(dian)(dian)(dian)(dian)极结(jie)(jie)构和(he)(he)光(guang)(guang)(guang)(guang)(guang)(guang)伏(fu)(fu)(fu)(fu)电(dian)(dian)(dian)(dian)池(chi)的(de)(de)(de)(de)厚度(du)等参数(shu)，可(ke)以提(ti)(ti)高(gao)(gao)光(guang)(guang)(guang)(guang)(guang)(guang)伏(fu)(fu)(fu)(fu)电(dian)(dian)(dian)(dian)池(chi)的(de)(de)(de)(de)光(guang)(guang)(guang)(guang)(guang)(guang)电(dian)(dian)(dian)(dian)转(zhuan)换效(xiao)(xiao)率(lv)。5.光(guang)(guang)(guang)(guang)(guang)(guang)伏(fu)(fu)(fu)(fu)电(dian)(dian)(dian)(dian)池(chi)的(de)(de)(de)(de)制备工艺：光(guang)(guang)(guang)(guang)(guang)(guang)伏(fu)(fu)(fu)(fu)电(dian)(dian)(dian)(dian)池(chi)的(de)(de)(de)(de)制备工艺也(ye)会对其光(guang)(guang)(guang)(guang)(guang)(guang)电(dian)(dian)(dian)(dian)转(zhuan)换效(xiao)(xiao)率(lv)产生(sheng)影(ying)(ying)响(xiang)。例如(ru)，采用高(gao)(gao)质(zhi)(zhi)量的(de)(de)(de)(de)制备工艺可(ke)以减少(shao)杂质(zhi)(zhi)和(he)(he)缺(que)陷的(de)(de)(de)(de)存在，从而(er)提(ti)(ti)高(gao)(gao)光(guang)(guang)(guang)(guang)(guang)(guang)伏(fu)(fu)(fu)(fu)电(dian)(dian)(dian)(dian)池(chi)的(de)(de)(de)(de)光(guang)(guang)(guang)(guang)(guang)(guang)电(dian)(dian)(dian)(dian)转(zhuan)换效(xiao)(xiao)率(lv)。光(guang)(guang)(guang)(guang)(guang)(guang)伏(fu)(fu)(fu)(fu)异(yi)质(zhi)(zhi)结(jie)(jie)技术的(de)(de)(de)(de)不断创(chuang)新，推动(dong)了太阳能产业的(de)(de)(de)(de)发展(zhan)和(he)(he)普及。深圳(zhen)釜川异(yi)质(zhi)(zhi)结(jie)(jie)设备哪家好

异质(zhi)结(jie)电池以其出(chu)色(se)的发电性能、技(ji)术延展性和低碳制(zhi)造过程，脱(tuo)颖而出(chu)成(cheng)为主流技(ji)术之一。成(cheng)都单(dan)晶硅(gui)异质(zhi)结(jie)PECVD

太阳(yang)能(neng)异质结(jie)电(dian)池(chi)工艺 1.清(qing)洗制(zhi)(zhi)绒。通(tong)(tong)过(guo)(guo)腐蚀去(qu)除表面(mian)损伤层，并且在表面(mian)进(jin)行(xing)制(zhi)(zhi)绒，以形(xing)(xing)成绒面(mian)结(jie)构达(da)到陷光(guang)效(xiao)果，减少反射损失；2.正面(mian)/背面(mian)非晶硅(gui)薄膜沉(chen)积(ji)。通(tong)(tong)过(guo)(guo)CVD方式在正面(mian)/背面(mian)分别(bie)沉(chen)积(ji)5~10nm的(de)(de)本征a-Si:H，作(zuo)为钝化(hua)层，然(ran)后再沉(chen)积(ji)掺杂层；3.正面(mian)/背面(mian)TCO沉(chen)积(ji)。通(tong)(tong)过(guo)(guo)PVD在钝化(hua)层上面(mian)进(jin)行(xing)TCO薄膜沉(chen)积(ji)；4.栅(zha)线电(dian)极(ji)。通(tong)(tong)过(guo)(guo)丝网印(yin)刷进(jin)行(xing)栅(zha)线电(dian)极(ji)制(zhi)(zhi)作(zuo)；5.烘烤(退(tui)火(huo))。通(tong)(tong)过(guo)(guo)丝网印(yin)刷进(jin)行(xing)正面(mian)栅(zha)线电(dian)极(ji)制(zhi)(zhi)作(zuo)，然(ran)后通(tong)(tong)过(guo)(guo)低(di)温烧结(jie)形(xing)(xing)成良好的(de)(de)接触(chu)；6.光(guang)注(zhu)入。7.电(dian)池(chi)测试(shi)及分选。成都单晶硅(gui)异质结(jie)PECVD

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